Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate

Gallium nitride (GaN) is a wide bandgap semiconductor with significant applications in optoelectronic and high-power electronic devices. The epitaxial growth of GaN on silicon (Si) substrates is of great interest due to the low cost, large wafer size, good thermal conductivity, and compatibility with established Si device technology. Gallium Nitride-Based Materials and Chips Epitaxially Grown on a Silicon Substrate reviews research on developing high-performance semiconductor materials and chips using gallium nitride-based materials. In particular the book, firstly, describes a novel, two-step growth method that combines low-temperature epitaxy by pulsed laser deposition (PLD) with high-temperature epitaxy by metal-organic chemical vapor deposition (MOCVD)/molecular beam epitaxy (MBE). This method effectively controls the stress of Si-based GaN epitaxial materials and significantly reduces the defect density of the epitaxial materials by three orders of magnitude. Secondly, in terms of chip structure design, the book describes a variety of Si-based GaN chips with novel heteroepitaxial structures, leading to the improved the efficiency of various chips such as light-emitting diode (LED) chips, high-electron-mobility transistors, Schottky diodes, photodetector chips, photoelectrochemical water-splitting chips, and Si-based GaN integrated chips. Finally, the book describes novel chip fabrication processes which greatly improve the performance and production efficiency of various chips by more than 30%.