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Produktbild: Nanoelectronics

Nanoelectronics Fundamentals, Advances, and Applications

259,99 €

inkl. gesetzl. MwSt., Versandkostenfrei


Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

23.09.2025

Herausgeber

Vijay Kumar Sharma

Verlag

John Wiley & Sons Inc

Seitenzahl

576

Sprache

Englisch

ISBN

978-1-394-27516-8

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

23.09.2025

Herausgeber

Vijay Kumar Sharma

Verlag

John Wiley & Sons Inc

Seitenzahl

576

Sprache

Englisch

ISBN

978-1-394-27516-8

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: gpsr@libri.de

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  • Produktbild: Nanoelectronics
  • Preface xvii

    1 Gaussian Doped SOI Junctionless FinFET: A Study of RDF Variability and Parametric Sensitivity 1
    Milad Mehmood Zargar, Md. Waseem Akram, Umayia Mushtaq, Nazida Ansari, Sana Fatima and Dipak Kumar Singh

    1.1 Introduction 2
    1.2 FinFET Technology 4
    1.3 Device Variability 6
    1.4 Junctionless Transistors 10
    1.5 Global TCAD Solutions 18
    1.6 Simulation Methodology 21
    1.7 Findings and Conversations 22
    1.8 Conclusion 37

    2 Nanotechnology and Applications 45
    Yogesh Singh, Sunny Kumar Sharma, Purnima Hazra and Ashish Choudhary

    2.1 Introduction 46
    2.2 What Makes Nanotechnology Work 48\
    2.3 Preparation Method 50
    2.4 Classification of Nanoparticles (NPs) 51
    2.5 Applications of Nanotechnology 52
    2.6 Future Prospect 59
    2.7 Conclusion 60

    3 Comparative Investigation of Various SRAM Cells with High Stability and Low Leakage 69
    Seema Eram, Umayia Mushtaq, Nazida Ansari and Md. Waseem Akram

    3.1 Introduction 70
    3.2 Previous Literature 74
    3.3 Leakage Reduction Techniques 76
    3.4 Architecture and Functioning of Different SRAM Cell 77
    3.5 SRAM Cell: Various Performance Parameters 82
    3.6 The Proposed 8-T SRAM Cell 86
    3.7 Results and Discussion 88
    3.8 Conclusion 96

    4 Application of Nanotechnology in the Development of Latent Fingerprints in the Field of Forensic Dermatoglyphics 103
    Navneet Kumar and Himanshu Yadav

    4.1 Introduction 104
    4.2 Principle of Fingerprint Detection 105
    4.3 Techniques for LFPs Analysis 106
    4.4 Nanotechnology in Forensic Science 110
    4.5 Discussion 119
    4.6 Conclusion 120

    5 Nanoelectronics: A Journey from Planar Transistor to Beyond Semiconductor 129
    Kajal and Vijay Kumar Sharma

    5.1 Introduction 130
    5.2 Evolution of Transistor Technology 133
    5.3 Advances in Transistor Design 140
    5.4 Challenges in Silicon Semiconductor Technology 143
    5.5 Beyond Silicon: New Materials and Technologies 148
    5.6 Quantum and Molecular Electronics 151
    5.7 Advanced Device Concept 152
    5.8 Conclusion 155

    6 EDP-Efficient Level Shifters for Super Threshold Voltage Level Shifting Applications 165
    Mohammed Mahaboob Basha, Gundala Srinivasulu and V. Madhurima

    6.1 Introduction 166
    6.2 Types of Voltage Level Shifters 169
    6.3 Performance Analysis of Start of Art Level Shifters 183
    6.4 Conclusion 185

    7 Applications of Nanotechnology in Nanoelectronics: Communication and Biomedical Field 191
    Rubby Mahajan and Ram Prakash

    7.1 Introduction 191
    7.2 2D and 3D Materials 192
    7.3 Multigates 194
    7.4 Carbon Nanotubes 198
    7.5 Graphene Nanoribbon (GNRs) 207
    7.6 Tunnel Transistor 211
    7.7 Junctionless Transistor 213
    7.8 Concept of Single Electron Idea 217
    7.9 Fundamental Principles of Spintronics 219
    7.10 Future Prospects 221

    8 Exploring CMOS, PTL and GDI Logic Families Based One Bit Full Adder and Subtractor Circuits in Subthreshold Region for Energy and EDP Efficient Applications 229
    Mohammed Mahaboob Basha, P. Lachi Reddy and Srinivasulu Gundala

    8.1 Introduction 230
    8.2 GDI- and CMOS-Based Logic Circuits 232
    8.3 A Variety of Approaches and Operation of the GDI-Based Full Adder Circuits 237
    8.4 Subthreshold Subtractor Circuits for Energy Efficient Signal Processing Applications 249
    8.5 Conclusion 261

    9 TFET Fundamentals: A Gateway to Nanoscale Electronics 267
    Khuraijam Nelson Singh, Ningombam Ajit Kumar, Sushmita Dandeliya, Pranab Kishore Dutta, Sonal Agrawal, Anurag Srivastava and Gaurav Kaushal

    9.1 Introduction 268
    9.2 Fundamentals of TFET 270
    9.3 Techniques for Enhancing Performance 276
    9.4 Application in Biosensor 280
    9.5 Significance of TFET in Advancing Nanoscale Electronics 286
    9.6 Challenges and Future Outlook 287
    9.7 Conclusion 288

    10 Revolutionizing Data Processing: In-Memory Computing and the Shift from Traditional Architectures 297
    Nazrana Gulzar, Nazida Ansari, Umayia Mushtaq and Md Waseem Akram

    10.1 Introduction 298
    10.2 In-Memory Computing: Enhancing Data Processing Efficiency 302
    10.3 Comparing Traditional Computing Architecture with In-Memory Computing 303
    10.4 Applications of IMC 305
    10.5 Types of Memory Used in IMC 307
    10.6 Operations of 6T-SRAM 311
    10.7 Architecture of SRAM-Based IMC 313
    10.8 Comparative Analysis of IMC Architecture Using Different Memory Types 314
    10.9 Design Challenges with SRAM Based IMC 325
    10.10 Conclusion 329

    11 The Tunnel FET: Fundamentals, Calibration, and Simulation 333
    Nisha Yadav, Sunil Jadav and Gaurav Saini

    11.1 Need of Tunnel FETs 334
    11.2 Origin of Tunnel FETs 336
    11.3 TFET Structure and Working Principle 336
    11.4 Performance Parameters 340
    11.5 The Development of TFET Technology 342
    11.6 Calibration 349
    11.7 Simulation of DG-TFET 350
    11.8 Challenges for TFET 353
    11.9 Conclusion 354

    12 The Junctionless Device 363
    Sandeep Kumar, Arun Kumar Chatterjee and Rishikesh Pandey

    12.1 Introduction 363
    12.2 Qualitative Behavior of JLFETs 366
    12.3 Electrical Characteristics of JLFET 374
    12.4 Design Constraints for Junctionless Devices 375
    12.5 Classification of JLFETs 378
    12.6 Status of Model Formulation for JLFETs 384
    12.7 Applications of JLFETs 385
    12.8 Simulation of JLFETs 386
    12.9 Conclusion 390

    13 Tuning the Electronic and Spintronic Properties of BN Nanoribbons via C-Doping 395
    Ajay Kumar Rakesh, Ravindra Kumar, Ankita Nemu, Neha Tyagi, Anil Govindan and Neeraj K. Jaiswal

    13.1 Introduction 396
    13.2 Significance of Boron Nitride Nanoribbons 399
    13.3 Techniques for Synthesis of h-BN 400
    13.4 Synthesis of BNNR 404
    13.5 Edge Passivation of BNNR 405
    13.6 Doping of BNNR 406
    13.7 Computational Details 407
    13.8 Results and Discussion 409
    13.10 Summary 418

    14 Revolutionizing Information Processing: Unveiling the Potential of Spintronics through Cutting¿Edge Electron Spin Research 429
    R. Bhattacharya

    14.1 Introduction 430
    14.2 Understanding Spintronics: Types 430
    14.3 Spintronic Materials and Devices 431
    14.4 Manipulating Spin-Orbit Coupling 445
    14.5 Spin Transport and Injection 447
    14.6 Spintronic Memory Devices 455
    14.7 Challenges and Future Directions 460
    14.8 Mathematical Consideration of Spintronics 465
    14.9 Conclusions 469

    15 Trade-Offs in the Ultra-Nanoscale: Balancing Performance and Constraints 475
    Pankaj Bhambri and Alex Khang

    15.1 Introduction 476
    15.2 Overview of Ultra-Nanoscale Design 477
    15.3 Performance Optimization in Ultra-Nanoscale Applications 481
    15.4 Nanomaterials in Ultra-Nanoscale Technologies 485
    15.5 Design Techniques with Logical Schematics and Characteristics 489
    15.6 Complex Limitations in the Ultra-Nanoscale Realm 490
    15.7 Manufacturing Challenges and Solutions 494
    15.8 Ethical Considerations in Ultra-Nanoscale Technologies 497
    15.9 Real-World Case Studies and Examples 498
    15.10 Conclusion 501

    16 Carbon Nanotube Field Effect Transistor Technology: Fundamentals & Applications 509
    Ekta Jolly and Vijay Kumar Sharma

    16.1 Introduction 510
    16.2 CNT Fundamentals 510
    16.3 CNTFET Modeling Approaches 515
    16.4 CNTFET-Based Circuits 519
    16.5 Conclusion 535

    References 535
    Index 541