Produktbild: Field Effect Transistors

Field Effect Transistors

266,99 €

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Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

15.04.2025

Herausgeber

P. Suveetha Dhanaselvam + weitere

Verlag

Wiley

Seitenzahl

528

Maße (L/B/H)

25,8/18,6/3,7 cm

Gewicht

1118 g

Sprache

Englisch

ISBN

978-1-394-24847-6

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

15.04.2025

Herausgeber

Verlag

Wiley

Seitenzahl

528

Maße (L/B/H)

25,8/18,6/3,7 cm

Gewicht

1118 g

Sprache

Englisch

ISBN

978-1-394-24847-6

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: GPSR Kontakt

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  • Produktbild: Field Effect Transistors
  • Preface xix

    1 Classical MOSFET Evolution: Foundations and Advantages 1
    S. Amir Ghoreishi and Samira Pahlavani

    1.1 Introduction of Classical MOSFET 1

    1.2 Dual-Gate MOSFET 3

    1.3 Gate-All-Around MOSFET 7

    1.4 ID -VG and ID -VG Characteristics of Conventional MOSFETs 8

    1.5 Capacitance Characteristics of Conventional MOSFETs 12

    1.6 Frequency-Dependent Behavior 15

    1.7 Conclusion 18

    References 19

    2 Marvels of Modern Semiconductor Field-Effect Transistors 23
    S. Amir Ghoreishi, Mohsen Mahmoudysepehr and Zeinab Ramezani

    2.1 Introduction 23

    2.2 Tunnel Field-Effect Transistor 25

    2.3 Junctionless Transistors 27

    2.4 GAA-FETs the Origin of Nanowire FETs and Nanosheet FETs 31

    2.5 Significance in Modern Electronics 32

    2.6 Main Electrical Characteristics of GAA-FETs 33

    2.7 GAA-FET Classification 35

    2.8 Nanowire Field-Effect Transistors (NW-FETs) 36

    2.9 Nanosheet Field-Effect Transistors (NS-FETs) 37

    2.10 Electrical Characteristics 38

    2.11 Conclusion 40

    References 42

    3 Introduction to Modern FET Technologies 45
    A. Babu Karuppiah and R. Rajaraja

    3.1 Introduction 45

    3.2 FinFETs (Fin Field-Effect Transistors) 46

    3.3 Unveiling Multi-Gate MOSFETs: A Symphony of Efficiency 47

    3.4 Unveiling Nanoscale MOSFETs: The Miniaturization Marvel 49

    3.5 High-Electron Mobility Transistors (HEMTs): A Leap into the Future of FET Technology 50

    3.6 Graphene Field-Effect Transistors (GFETs): Pioneering the Future of FET Technology 51

    3.7 Tunnel Field-Effect Transistors (TFETs): Navigating the Quantum Realm of Future Electronics 53

    3.8 Silicon Carbide (SiC) MOSFETs: Transforming Power Electronics for a Greener Future 54

    3.9 Power MOSFETs: Empowering the Future of High-Efficiency Power Electronics 55

    3.10 Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs): Unleashing the Power of Wide Bandgap Semiconductors 56

    3.11 Organic Field-Effect Transistors (OFETs): Bridging the Gap to Flexible and Sustainable Electronics 58

    3.12 Conclusion 59

    Bibliography 60

    4 Scaling of Field-Effect Transistors 63
    L. Vinoth Kumar, G. Pradeep Kumar and B. Karthikeyan

    4.1 Introduction 63

    4.2 Short-Channel Effect 65

    4.3 FinFET Overview 67

    4.4 GAAFET Overview 69

    4.5 Conclusions 71

    References 71

    5 Future Prospective Beyond CMOS Technology Design 73
    P. Suveetha Dhanaselvam, B. Karthikeyan and P. Anand

    5.1 Introduction 73

    5.2 Spintronics 74

    5.3 Carbon Nanotube Transistors 75

    5.4 Memristor 77

    5.4.1 Working Principle 77

    5.5 Applications 78

    5.6 Quantum Dots 78

    References 79

    6 Nanowire Transistors 81
    P. Suveetha Dhanaselvam, B. Karthikeyan, S. Nagarajan and B. Padmanaban

    6.1 Introduction 81

    6.2 Nanowire FETs 83

    6.3 Organic Nanowire Transistors 89

    6.4 Conclusion 90

    References 90

    7 Advancement of Nanotechnology and NP-Based Biosensors 93
    P. Anand and B. Muneeswari

    7.1 Introduction 93

    7.2 Metal Oxide-Based Biosensors 95

    7.3 Zinc Oxide-Based Biosensor 96

    7.4 AuNP-Based Biosensors 98

    7.5 GR-Based Biosensors 101

    References 102

    8 Technology Behind Junctionless Semiconductor Devices 105
    Pavani Kollamudi and Srinivasa Rao Karumuri

    8.1 Introduction 106

    8.2 Operating Modes Based on the Structure of the Device 112

    8.3 TCAD Simulations 116

    8.4 Effect of Temperature 119

    8.5 Results and Discussions 120

    8.6 Conclusion 123

    References 123

    9 Breaking Barriers: Junctionless Metal-Oxide-Semiconductor Transistors Reinventing Semiconductor Technology 125
    G. Vijayakumari, U. Rajasekaran, R. Praveenkumar, S. D. Vijayakumar and V. Kumar

    9.1 Introduction 125

    9.2 Junctionless MOS Transistors: Principles and Concepts 130

    9.3 Fabrication Techniques for Junctionless Transistors 134

    9.4 Real-World Implementations of Junctionless Transistors 139

    9.5 Conclusion 143

    9.6 Applications 143

    References 143

    10 Performance Estimation of Junctionless Tunnel Field-Effect Transistor (JL-TFET): Device Structure and Simulation Through TCAD 145
    Pradeep Kumar Kumawat, Shilpi Birla and Neha Singh

    10.1 Introduction 145

    10.2 Junctionless TFETs 148

    10.3 Design Structure of Junctionless TFETs 150

    10.4 Conclusion 154

    References 154

    11 Science and Technology of Tunnel Field-Effect Transistors 157
    Zuber Rasool, Nuzhat Yousf, Aadil Anam and S. Intekhab Amin

    11.1 Phenomenon of Quantum Tunneling 157

    11.2 Tunneling Mathematics 158

    11.3 Tunnel Field-Effect Transistors (TFETs) 165

    11.4 Conclusion 183

    References 183

    12 Circuits Designed for Energy-Harvesting Applications That Leverage TFETs to Achieve Extremely Low Power Consumption 189
    Basudha Dewan

    12.1 Introduction 189

    12.2 Energy Harvesting in an Era Beyond Moore's Law 193

    12.3 Tunnel Field-Effect Transistors (TFETs) as a Vital Technology for Energy Harvesting 194

    12.4 Tunnel FET Technology: State of the Art 196

    12.5 Band-to-Band Tunneling (BTBT) Current 196

    12.6 MOSFET vs. TFET 197

    12.7 Innovations in the Configurations of TFETs 200

    12.8 Conclusion 202

    References 202

    13 A Ferroelectric Negative-Capacitance TFET with Extended Back Gate for Improvement in DC and Analog/HF Parameters 205
    Anil Kumar Pathakamuri, Chandan Kumar Pandey, Diganta Das, Umakanta Nanda and Shiromani Balmukund Rahi

    13.1 Introduction 206

    13.2 Architectural Configuration and Simulation Approach 207

    13.3 Results and Discussion 208

    13.4 Conclusion 217

    References 217

    14 Basic Concepts of Heterojunction Tunnel Field-Effect Transistors 221
    P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha and P. Kavitha

    14.1 Introduction 221

    14.2 Boosting TFET ON Current 223

    14.3 Heterojunction TFET 225

    14.4 Various Heterojunction Structures 226

    14.5 Conclusion 232

    References 233

    15 Boosting Performance of Charge Plasma-Based TFETs 235
    Iman Chahardah Cherik, Saeed Mohammadi and Hadiseh Hosseinimanesh

    15.1 Introduction 235

    15.2 What is Charge Plasma Concept? 236

    15.3 Techniques to Enhance the Performance of Dopingless TFETs 238

    15.4 Materials Engineering 238

    15.5 Enhancement of the Electrostatic Control 243

    15.6 Drawbacks of Dopingless TFET 247

    15.7 Benchmarking 251

    15.8 Summary 252

    Future Scope 252

    References 253

    16 TFET Device Modeling Using ML Algorithms 257
    P. Vanitha, Paulvanna Nayaki Marimuthu, N. B. Balamurugan and M. Hemalatha

    16.1 Introduction 258

    16.2 Role of ML Algorithms in Device Modeling 259

    16.3 Simulation of Devices and ML Techniques 261

    16.4 Dataset Generation 262

    16.5 ml Workflow 263

    16.6 Comparison of ML Algorithms 264

    References 267

    17 Design of Next-Generation Field-Effect Transistors Using Machine Learning 269
    K. Girija Sravani, M. Srikanth, Manikanta Sirigineedi and Padma Bellapukonda

    17.1 Introduction 269

    17.2 Description 270

    17.3 Optimizing FET Performance through Machine Learning 271

    17.4 Enhancing Predictive Accuracy and Robustness 275

    17.5 Integrating ML-Optimized FET Structures with Manufacturing Advances 279

    17.6 Conclusion 282

    Bibliography 282

    18 Machine Learning-Augmented Blockchain-Based Graphene Field-Effect Transistor Sensor Platform for Biomarker Detection 287
    Srinivasa Rao Karumuri, M. Srikanth, J.M.S.V. Ravi Kumar and Bhanurangarao M.

    18.1 Introduction 287

    18.2 Description 288

    18.3 Conclusion 306

    Bibliography 306

    19 Heterojunction Concept and Technology for FET Developments 311
    Shashank Kumar Dubey, Soumak Nandi, Kondaveeti Girija Sravani, Sandip Swarnakar, Mukesh Kumar and Aminul Islam

    19.1 Introduction 311

    19.2 Concept of Heterojunction 313

    19.3 Heterojunction Field-Effect Transistors (HFETs): An Advanced FET 315

    19.4 GaAs-Based HEMTs 318

    19.5 InP-Based HEMTs 319

    19.6 GaN-Based HEMTs and its Applications 320

    References 327

    20 Characteristic Analysis of GOS HTFET 333
    B. V. V. Satyanarayana, T. S. S. Phani, A. K. C. Varma, G. Prasanna Kumar, M. V. Ganeswara Rao and Prudhvi Raj Budumuru

    20.1 Introduction 333

    20.2 Design Considerations of GOS HTFET 335

    20.3 Device Physics and Structures of GOS HTFETs 339

    20.4 Model of GOS HTFET 343

    20.5 Simulation and Validation of GOS HTFET 345

    20.6 Characteristics of GOS HTFET 346

    20.7 Limitations of GOS HTFET 351

    20.8 Application of GOS HTFET in SRAM Design 351

    20.9 Conclusions 352

    References 353

    21 A Charge-Based 2D Mathematical Model for Dual-Material Gate Fe-Doped AlGaN/AlN/GaN High-Electron Mobility Transistors 355
    N. B. Balamurugan, M. Hemalatha, M. Suguna and D. Sriram Kumar

    21.1 Introduction 356

    21.2 Device Structure and Description 356

    21.3 Mathematical Formulation 358

    21.4 Summary 370

    References 370

    22 Exploring Vertical Transition Metal Dichalcogenide Heterostructure MOSFET: A Comprehensive Review 373
    Malu U., Charles Pravin J. and Sandeep V.

    22.1 Introduction 373

    22.2 Transition Metal Dichalogenides (TMDs) 375

    22.3 Heterostructure Transition Metal Dichalcogenides 378

    22.4 Some of the TMD-Related Materials 381

    22.5 Other Properties 384

    22.6 Conclusion 384

    References 384

    23 Two-Dimensional Materials and Devices for UV Detection 393
    Penchalaiah Palla, Akbar Basha Dhu-al Shaik, David Jenkins and Srinivasa Rao Karumuri

    23.1 Part 1: Introduction to 2D Materials and UV Detectors 394

    23.2 Part 2: Recent Developments in 2D Material-Based UV Detectors 407

    23.3 Summary 412

    References 413

    24 Negative-Capacitance Field-Effect Transistor for Optimization of Power Factor for Modern Applications 417
    Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Hanumant Lal and Srinivasa Rao Karumuri

    24.1 Introduction 418

    24.2 Requirement of Low-Power MOSFET 418

    24.3 Challenges in Classical MOS Devices 419

    24.4 Negative Capacitance: Low-Power Device 421

    24.5 Fundamental of Negative-Capacitance Technology 422

    24.6 Negative-Capacitance Transistors 426

    24.7 Fundamental Approach for Low-Power Circuit Design 426

    24.8 Future Scope 427

    24.9 Conclusion 428

    References 428

    25 Nanoscale High-K Tri-Material Surrounding-Gate MOSFET-An Insight Analysis 433
    P. Suveetha Dhanaselvam, S. Vasuki, B. Karthikeyan and D. Sriram Kumar

    25.1 Introduction 433

    25.2 Proposed Structure 435

    25.3 Analytical Model 435

    25.4 Conclusion 441

    References 441

    26 Nanoscale Field-Effect Transistors (FETs) in RF Applications 443
    Rajeswari P., Gobinath A., Suresh Kumar N. and Anandan M.

    26.1 Introduction 444

    26.2 Fundamental Principles and Operating Characteristics of FETs 447

    26.3 Scaling Challenges in Nanoscale FETs for RF Applications 450

    26.4 Exploring the Landscape: Field-Effect Transistors (FETs) in Radiofrequency (RF) Applications 452

    26.5 Conclusion 454

    References 455

    27 Emerging Subthreshold Swing FET for Next-Generation Technology Nodes 457
    G. Lakshmi Priya, T. Ranjith Kumar, G. Gifta, A. Andrew Roobert and M. Venkatesh

    27.1 Introduction 458

    27.2 Fundamental Challenges with Conventional FET Device 458

    27.3 Developed Emerging Subthreshold Swing FET and its Working Principle 465

    27.4 Limitations of Emerging Subthreshold Swing FET 470

    27.5 Techniques to Overcome the Limitations of Emerging Subthreshold Swing FET 470

    27.6 Conclusion 472

    References 472

    28 Elucidation of the Impact of Nano Heat Transfer Variability on Three-Dimensional Field-Effect Transistors 477
    Faouzi Nasri, Husien Salama, Billel Smaani and Khalifa Ahmed Salama

    28.1 Introduction 478

    28.2 Mathematical Formulation and Structural Analysis 482

    28.3 Results and Discussion 485

    28.4 Conclusion 490

    References 491

    About the Editors 493

    Index 495