• Produktbild: Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
  • Produktbild: Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
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Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

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Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

19.01.2012

Abbildungen

XXXII, 592 p.

Herausgeber

Peter Capper

Verlag

Springer Us

Seitenzahl

592

Maße (L/B/H)

23,5/15,5/3,4 cm

Gewicht

937 g

Auflage

Softcover reprint of the original 1st ed. 1997

Sprache

Englisch

ISBN

978-1-4612-8421-5

Beschreibung

Portrait

Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

19.01.2012

Abbildungen

XXXII, 592 p.

Herausgeber

Peter Capper

Verlag

Springer Us

Seitenzahl

592

Maße (L/B/H)

23,5/15,5/3,4 cm

Gewicht

937 g

Auflage

Softcover reprint of the original 1st ed. 1997

Sprache

Englisch

ISBN

978-1-4612-8421-5

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: ProductSafety@springernature.com

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  • Produktbild: Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
  • Produktbild: Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
  • One: Growth Techniques.- 1 Bulk growth techniques.- 2 Liquid phase epitaxy.- 3 Metal-organic vapour phase epitaxy.- 4 Molecular beam epitaxy of HgCdTe.- Two: Materials Characterisation.- 5 Optical properties of MCT.- 6 Transport properties of narrow-gap II-VI compounds.- 7 Intrinsic and extrinsic doping.- 8 Point defects in narrow-gap II-VI compounds.- 9 Diffusion in narrow-gap II-VI compounds.- 10 Surfaces/interfaces of narrow-gap II-VI compounds.- 11 Trends in structural defects in narrow-gap II-VI semiconductors.- 12 Quantum wells and superlattices.- 13 Properties of diluted magnetic semiconductors.- Three: Device Applications.- 14 Photoconductive detectors in HgCdTe and related alloys.- 15 Photovoltaic IR detectors.- 16 Non-equilibrium devices in HgCdTe.- 17 Emission devices.- 18 Photoelectromagnetie, magnetoconcentration and Dember infrared detectors.- 19 Solar cells based on CdTe.- 20 Radiation detectors.