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Produktbild: Transparent Oxide Electronics

Transparent Oxide Electronics From Materials to Devices

143,99 €

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

16.04.2012

Verlag

John Wiley & Sons Inc

Seitenzahl

320

Maße (L/B/H)

24,9/17/2 cm

Gewicht

680 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-470-68373-6

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

16.04.2012

Verlag

John Wiley & Sons Inc

Seitenzahl

320

Maße (L/B/H)

24,9/17/2 cm

Gewicht

680 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-470-68373-6

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: gpsr@libri.de

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  • Produktbild: Transparent Oxide Electronics

  • Preface xiii

    Acknowledgments xv

    1 Introduction 1

    1.1 Oxides and Transparent Electronics: Fundamental Research or Heading Towards Commercial Products? 1

    1.2 The Need for Transparent (Semi)Conductors 3

    1.3 Reaching Full Transparency: Dielectrics and Substrates 5

    References 6

    2 N-type Transparent Semiconducting Oxides 9

    2.1 Introduction: Binary and Multicomponent Oxides 9

    2.1.1 Binary Compounds: the Examples of Zinc Oxide and Indium Oxide 9

    2.1.2 Ternary and Quaternary Compounds: the Examples of Indium-Zinc Oxide and Gallium-Indium-Zinc Oxide 12

    2.2 Sputtered n-TSOs: Gallium-Indium-Zinc Oxide System 16

    2.2.1 Dependence of the Growth Rate on Oxygen Content in the Ar+O2 Mixture and Target Composition 16

    2.2.2 Structural and Morphological Properties 18

    2.2.3 Electrical Properties 22

    2.2.4 Optical Properties 41

    2.3 Sputtered n-TSOs: Gallium-Zinc-Tin Oxide System 49

    2.4 Solution-Processed n-TSOs 51

    2.4.1 ZTO by Spray-pyrolysis 51

    2.4.2 ZTO by Sol-gel Spin-coating 52

    2.4.3 GIZO Sol-gel by Spin-coating 52

    References 55

    3 P-type Transparent Conductors and Semiconductors 63

    3.1 Introduction 63

    3.2 P-type Transparent Conductive Oxides 64

    3.3 Thin Film Copper Oxide Semiconductors 66

    3.3.1 Role of Oxygen in the Structure, Electrical and Optical Performance 70

    3.4 Thin Film Tin Oxide Semiconductors 75

    3.4.1 Structure, Composition and Morphology of Tin Oxide Films 78

    3.4.2 Electrical and Optical Properties of Tin Oxide Films 84

    References 94

    4 Gate Dielectrics in Oxide Electronics 101

    4.1 Introduction 101

    4.2 High-k Dielectrics: Why Not? 102

    4.3 Requirements 103

    4.4 High-k Dielectrics Deposition 106

    4.5 Sputtered High-k Dielectrics in Oxide TFTs 106

    4.6 Hafnium Oxide 107

    4.6.1 Multicomponent Co-sputtered HfO2 Based Dielectrics 117

    4.6.2 Multicomponent Dielectrics from Single Target 126

    4.7 Tantalum Oxide (Ta2O5) 130

    4.7.1 Multicomponent Ta2O5 Based Dielectrics 133

    4.8 Multilayer Dielectrics 138

    4.9 High-k Dielectrics/Oxide Semiconductors Interface 141

    4.10 Summary 146

    References 147

    5 The (R)evolution of Thin-Film Transistors (TFTs) 155

    5.1 Introduction: Device Operation, History and Main Semiconductor Technologies 155

    5.1.1 Device Structure and Operation 155

    5.1.2 Brief History of TFTs 161

    5.1.3 Comparative Overview of Dominant TFT Technologies 168

    5.2 Fabrication and Characterization of Oxide TFTs 170

    5.2.1 N-type GIZO TFTs by Physical Vapor Deposition 171

    5.2.2 N-type GZTO TFTs by Physical Vapor Deposition 187

    5.2.3 N-type Oxide TFTs by Solution Processing 189

    5.2.4 P-type Oxide TFTs by Physical Vapor Deposition 193

    5.2.5 N-type GIZO TFTs with Sputtered Dielectrics 196

    References 202

    6 Electronics With and On Paper 211

    6.1 Introduction 211

    6.2 Paper in Electronics 212

    6.3 Paper Properties 214

    6.3.1 Structure, Morphology and Thermal Properties 214

    6.3.2 Electrical Properties of the Paper 218

    6.4 Resistivity Behaviour of Transparent Conductive Oxides Deposited on Paper 223

    6.5 Paper Transistors 225

    6.5.1 Current Transport in Paper Transistors 228

    6.6 Floating Gate Non-volatile Paper Memory Transistor 230

    6.6.1 Memory Paper Device Feasibility and Stability 233

    6.6.2 Memory Selective and Charge Retention Time Behaviors 234

    6.7 Complementary Metal Oxide Semiconductor Circuits With and On Paper - Paper CMOS 237

    6.7.1 Capacitance-Voltage and Current-Voltage Characteristics of N/P-Type Paper Transistors 240

    6.7.2 N- and P-c