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Produktbild: Compact Mosfet Models for VLSI

Compact Mosfet Models for VLSI

Aus der Reihe Wiley - IEEE

214,99 €

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

01.05.2009

Verlag

John Wiley & Sons

Seitenzahl

512

Maße (L/B/H)

25/17,5/2,9 cm

Gewicht

966 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-470-82342-2

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

01.05.2009

Verlag

John Wiley & Sons

Seitenzahl

512

Maße (L/B/H)

25/17,5/2,9 cm

Gewicht

966 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-0-470-82342-2

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: gpsr@libri.de

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  • Produktbild: Compact Mosfet Models for VLSI
  • Preface.
     
    Acknowledgements.
     
    List of Symbols.
     
    1 Semiconductor Physics Review for MOSFET Modeling.
     
    1.1 Introduction.
     
    1.2 Crystal Planes.
     
    1.3 Band Theory of Semiconductors.
     
    1.4 Carrier Statistics.
     
    1.5 Carrier Generation and Recombination.
     
    1.6 Carrier Scattering.
     
    1.7 Contacts and Interfaces.
     
    1.8 Strained Silicon.
     
    1.9 Basic Semiconductor Equations.
     
    1.10 Compact MOSFET Models.
     
    1.11 The p-n Junction Diode.
     
    1.12 Tunneling Through Potential Barrier.
     
    References.
     
    2 Ideal Metal Oxide Semiconductor Capacitor.
     
    2.1 Physical Structure and Energy Band Diagram.
     
    2.2 Modes of Operation of MOS Capacitors.
     
    2.3 Electric Field and Potential Distributions.
     
    2.4 Potential Balance.
     
    2.4.1 An Explicit Relation of Æs with VGB.
     
    2.5 Inversion Layer Thickness.
     
    2.6 Threshold Voltage.
     
    2.7 Small Signal Capacitance.
     
    2.8 Three Terminal Ideal MOS Structures.
     
    References.
     
    3 Non-ideal and Non-classical MOS Capacitors.
     
    3.1 Introduction.
     
    3.2 Flat-Band Voltage.
     
    .2.2 Oxide Charges.
     
    3.3 Inhomogeneous Substrate.
     
    3.4 Polysilicon Depletion Effect.
     
    3.5 Non-classical MOS Structures.
     
    3.6 MOS Capacitor With Stacked Gate.
     
    References.
     
    4 Long Channel MOS Transistor.
     
    4.1 Introduction.
     
    4.2 Layout and Cross-Section of Physical Structure.
     
    4.3 Static Drain Current Model.
     
    4.4 Threshold Voltage (VT ) Based Model.
     
    4.5 Memelink-Wallinga Graphical Model.
     
    4.6 Channel Length Modulation.
     
    4.6.1 Early Voltage.
     
    4.7 Channel Potential and Field Distribution Along Channel.
     
    4.8 Carrier Transit Time.
     
    4.9 EKV Drain Current Model.
     
    4.10 ACM and BSIM5 Models.
     
    4.11 PSP Model.
     
    4.12 HiSIM (Hiroshima University STARC IGFET Model) Model.
     
    4.13 Benchmark Tests for Compact DC Models.
     
    References.
     
    5 The Scaled MOS Transistor.
     
    5.1 Introduction.
     
    5.2 Classical Scaling Laws.
     
    5.3 Lateral Field Gradient.
     
    5.4 Narrow and Inverse Width Effects.
     
    5.5 Reverse Short Channel Effect.
     
    5.6 Carrier Mobility Reduction.
     
    5.7 Velocity Overshoot.
     
    5.8 Channel Length Modulation: A Pseudo-2-D Analysis.
     
    5.9 Series Resistance Effect on Drain Current.
     
    5.10 Polydepletion Effect on Drain Current.
     
    5.11 Impact Ionization in High Field Region.
     
    5.12 Channel Punch-Through.
     
    5.13 Empirical Alpha Power MOSFET Model.
     
    5.13.1 Physical Interpretation of the Alpha Power Model.
     
    References.
     
    6 Quasistatic, Non-quasistatic, and Noise Models.
     
    6.1 Introduction.
     
    6.2 Quasistatic Approximation.
     
    6.3 Terminal Charge Evaluation.
     
    6.4 Quasistatic Intrinsic Small Signal Model.
     
    6.5 Extrinsic Capacitances.
     
    6.6 Non-quasistatic (NQS) Models.
     
    6.7 Noise Models.
     
    References.
     
    7 Quantum Phenomena in MOS Transistors.
     
    7.1 Introduction.
     
    7.2 Carrier Energy Quantization in MOS Capacitor.
     
    7.3 2-D Density of States.
     
    7.4 Electron Concentration Distribution.
     
    7.5 Approximate Methods.
     
    7.6 Quantization Correction in Compact MOSFET Models.
     
    7.7 Quantum Tunneling.
     
    7.8 Gate Current Density.
     
    7.9 Compact Gate Current Models.
     
    7.10 Gate Induced Drain Leakage (GIDL).
     
    Refer